Low‐temperature oxygen diffusion in silicon
نویسندگان
چکیده
منابع مشابه
Coupled-barrier diffusion: The case of oxygen in silicon.
Oxygen migration in silicon corresponds to an apparently simple jump between neighboring bridge sites. Yet, extensive theoretical calculations have so far produced conflicting results and have failed to provide a satisfactory account of the observed 2.5 eV activation energy. We report a comprehensive set of first-principles calculations that demonstrate that the seemingly simple oxygen jump is ...
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As device dimensions shrink to submicron levels, good design of ultrashallow junctions has become increasingly important. It is in this context that the use of carbon/oxygen as a possible diffusion-suppressing agent for phosphorus has been suggested. To study this complex phenomenon, this experimental study looks at the effects of low dose silicon, carbon, and oxygen implantation damage on the ...
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The oxygen diffusion in Y B a X u j O ^ , , was studied between 300 K and 1273 K in flowing oxygen by monitoring the 1 3 Ba(EC) Cs nuclear quadrupole interaction by time differential perturbed angular correlation. The data are analyzed in a model of two different nearest neighbour oxygen configurations and yield hopping rates, the energy barrier and the difference in free enthalpy between both ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1984
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.94968